壹、儀器設備說明 (規格)：

1. Growth Chamber:
   1. Arrival　pressure: at least up to 2.7×10-7Pa (2×10-9Torr)
   2. Chamber size: Spherical chamber with diameter >250mm.
   3. Pumping system: Main-pumping (Ceramic bearing type Turbo Molecular Pump): >300 L/s, Sub-pumping (Rotary Pump): >250 L/m
   4. Gauges: ion gauge x 1, convectron gauge x 2
   5. Basical ports: with pump mount ports, RHEED mount and image ports, gauge ports, substrate and target transfer ports, monitor ports, combinational mask positioning view ports.
   6. Laser beam introduction port: with transmittance > 90% for KrF or ArF.
   7. Laser beam introduction port.
2. Substrate and heating system:
   1. Laser diode heating system: Substrate temperature can be retained at least 1000 degree C for a 10mm x 10mm size.
   2. Laser beam outpower: 120W
   3. Laser beam emission length: 807 nm
   4. Temperature holding at 1000 degree C over 1 hour.
   5. Temperature stability: <±1 degree C.
   6. Cooling system.
   7. With pyrometer.
3. Target manipulator unit:
   1. At least 6 targets.
   2. Size: 20mm
   3. With rotation and revolution system.
4. Combinatorial mask unit:
   1. Automatic and synchronous controlled masks in x-y dimensions.
   2. Mask patterns are designable.
   3. Masks are changeable.
   4. Masks can be worked at 1000 degree C.
5. Scanning reflection high-energy electron diffraction unit:
   1. Acceleration voltage: 30kV
   2. With standard bearing type turbo molecular pump
   3. Corresponding power supply
   4. CCD camera unit and image processing system with computer.
   5. Operation up to 10-6 Torr.
6. Load-Lock chamber:
   1. Ultimate pressure: 6.7x10-5 Pa (5x10-7 Torr)
   2. Pumping system: Main-pumping (Turbo Molecular Pump): >80 L/s, Sub-pumping (Rotary pump): >160 L/m
   3. Gauges: ion gauge x 1, convectron gauge x 1
   4. With x-y sample transport for additional chambers in future.
   5. With venting line.
7. Substrate and target transfer:
   1. Transferring substrates and targets without venting main chamber.
8. Laser system:
   1. pulse energy: 400 mJ
   2. wavelength: 248nm
   3. average power: 7W
   4. max rep. rate: 20Hz
   5. with cooling system
9. Control and measurement system:
   1. Programmable logic controller:
      1.Combinatorial thin film preparation by GUI.Completely synchronously control of above items for Combinatorial thin film preparation.
      2. Read, correct save and execute the recipe in the sequencer and the files managed by computer.
      3. Computer can monitor RHEED patterns observed by CCD camera, and the pattern (graphics data) and RHEED oscillation (binary/text file) can be saved.
   2. LabView based control software in windows PC:
10. Interlock system:
    1. Vacuum pumping system: Protection against the miss operation of push button on control racks.
    2. Substrate heating mechanism: Substrate heating automatic shutoff function by detection of the shortage of circulating cooling water flow rate.
    3. Blackout: Vacuum hold function by pumping system cutoff. Automatic recovery/reset is not done when power transmission is restarted.
    4. Emergency stop: Master stop function of system with emergency shut down button (EMO) on the control rack.

貳、服務項目：

委託代工製備高品質磊晶氧化物薄膜或多層膜。

參、取樣、使用應注意事項：

1. 預約時應填寫委託代工單，詳細填寫樣品參數，包含：薄膜厚度、成長溫度、成長壓力以及材料。若有任何特殊需求應事先與管理人員討論樣品製作規格與細節。
2. 應於委託代工7日前將試片送交管理人員，以利樣品傳送與準備。
3. 委託代工人需自備靶材(規格：直徑20mm，厚度3~5mm)及基板。
4. 若違反上述規定者，恕不代工製備。
5. 鍍材若易揮發或易污染其他靶源，將不予代工。

肆、使用時段與預約：

應於預計代工時程14天前到儀設中心(上網)預約。
每周一二三09:00-17:00開放代工，未來視成長需要再開放其他代工時間。

伍、訓練課程規定辦法：

因本精密儀器操作之特殊工藝要求，不開放自行操作，暫無提供訓練課程。請委託代工人依規定預約代工。如欲參與磊晶過程，請與儀器管理人事先聯絡。

陸、收費辦法及標準(含訓練課程)：

校內學術:

1. 無單位配合款: 800元/時
2. 有單位配合款
   1. 400元/時
   2. 其他 (IIAS)

校外學術:1200元/時

柒、儀器聯絡與管理人：

聯絡人：邱詩航　諮詢教授：黃榮俊

分機：65266　　分機：65266

儀器放置地點：儀設大樓1樓0113室